Symposium FF-Integration of Functional Oxides with Semiconductors

The development of crystalline epitaxial oxides on semiconductors (COS) has triggered an interest in developing a new avenue for the integration of these oxides on a number of mature semiconductor platforms, such as Si, Ge, GaAs and GaN. Complex oxides that have been successfully integrated with these semiconductors have diverse properties ranging from a high dielectric constant, with applications to the well-established Si MOSFET, to ferroelectricity, superconductivity, non-linear optical properties and magnetism. Current research focuses on a number of exciting possibilities and difficult challenges such as controlling their properties, integration with the semiconductor platform, and solving fundamental aspects of epitaxial growth.

The integration of functional oxides with semiconductors offer new ways to sense, store and manipulate information and thus are well suited for broader applications in the field of Information and Communication Technology. Many oxide properties are sensitive to temperature, strain, electric and magnetic fields, making them attractive materials for sensors, optical interconnect, automotive radar, photonics, solid state lighting, microelectromechanical systems, and photocatalysis. Monolithic integration with semiconductors will enable the added functionalities to be incorporated on a single chip, which leverages state-of-the-art semiconductor device technology and data processing systems.

The aim of this symposium is to connect interdisciplinary topics related to physics, materials science and engineering through invited abstracts in order further build the COS community and accelerate the development of these materials toward applications.

• Theory and modeling
• Critical issues and challenges of oxide-semiconductor epitaxy
• Perovskites and non perovskites on Si and Ge, compound semiconductor
• Fundamentals of growth, doping, composition control
• Electronic and ionic transport
• Strain related phenomena, point and extended defect generation and propagation
• Advanced physical characterization
• Micro and nanostructuring, device processing
• Properties at nanoscale, interface related phenomena
• Applications in logic and memory
• Applications in optical information processing
• Applications in catalysis

• FF_Integration of Functional Oxides with Semiconductors_0 (IBM Research GmbH, Switzerland)
• FF_Integration of Functional Oxides with Semiconductors_1 (Leibniz University Hannover, Germany)
• FF_Integration of Functional Oxides with Semiconductors_2 (CNRS Lyon, France)
• FF_Integration of Functional Oxides with Semiconductors_3 (The University of Texas at Austin, USA)
• FF_Integration of Functional Oxides with Semiconductors_4 (Pennsylvania State University, USA)
• FF_Integration of Functional Oxides with Semiconductors_5 (Paul-Drude-Institut Berlin, Germany)
• FF_Integration of Functional Oxides with Semiconductors_6 (Indian Institute of Technology Bombay, India)
• FF_Integration of Functional Oxides with Semiconductors_7 (University Paris-Sud, France)
• FF_Integration of Functional Oxides with Semiconductors_8 (Katholic University of Leuven, Belgium)
• FF_Integration of Functional Oxides with Semiconductors_9 (University of Texas, Arlington, USA)
• FF_Integration of Functional Oxides with Semiconductors_10 (CNR-IMM, MDM Laboratory, Italy)
• FF_Integration of Functional Oxides with Semiconductors_11 (Northeastern University, USA)