Symposium AA-Organic Semiconductors—Surface, Interface and Bulk Doping

Doping of semiconductors permits tuning of their conductivity as well as the alignment of their electronic bands at interfaces with other materials. For inorganic semiconductors the development of processes for controlled doping of high-purity intrinsic materials paved the way for the multitude of microelectronic devices that that are pervasive in information technologies. In contrast, the majority of today’s organic (opto-)electronic devices, such as field-effect transistors, light-emitting diodes, or photovoltaic cells, still rely on intrinsic organic semiconductors (OSCs).

In the rapidly growing field of organic electronics, where OSCs are the active component, doping can provide a very value means to truly optimize the performance of devices. Recent benchmark organic electronic devices have demonstrated that interface and bulk molecular electrical doping can dramatically enhance performance. However, the microscopic mechanisms that govern doping of OSCs with molecular acceptors/donors are still not well understood, and the overall materials science of doped OSCs is at an early stage.

Moreover, surfaces of and interfaces with OSCs can selectively be doped by contact-induced charge transfer to establish electronic equilibrium, and a coherent understanding of the prerequisites to exploit these phenomena in devices is just emerging.

This symposium is dedicated to unite the views in physics, chemistry, materials science, and electrical engineering on doping and charge transfer phenomena at the surfaces, interfaces, and in the bulk of organic semiconductors. The entire range of OSC doping science will be covered in topical sessions, including synthesis of novel doping agents and material design, experimental and theoretical approaches to unravel fundamental mechanisms, advanced thin film and interface fabrication techniques, and enhancement of (opto-)electronic devices via doping approaches.

The interdisciplinary approach needed to establish OSC doping as viable technology component will be manifested by invited and contributed abstracts as well as posters, to stimulate discussions towards accelerated knowledge-based implementation in devices.

• Adsorbate induced charge transfer at organic semiconductor surfaces
• Electrode induced doping and band bending
• Doping at organic and hybrid semiconductor heterojunctions
• Mechanisms of bulk doping in organic semiconductors
• Optical and electrical properties of doped organic semiconductors
• New organic and inorganic dopants and material processing schemes
• Application of doping phenomena in (opto-)electronic devices
• Effects of current stress and air exposure on doping

• AA_Organic Semiconductors—Surface, Interface and Bulk Doping _0 (MPI Mainz, Germany)
• AA_Organic Semiconductors—Surface, Interface and Bulk Doping _1 (KAUST, Saudi Arabia)
• AA_Organic Semiconductors—Surface, Interface and Bulk Doping _2 (Princeton University, USA)
• AA_Organic Semiconductors—Surface, Interface and Bulk Doping _3 (TU Dresden, Germany)
• AA_Organic Semiconductors—Surface, Interface and Bulk Doping _4 (University of California, Santa Barbara, USA)
• AA_Organic Semiconductors—Surface, Interface and Bulk Doping _5 (University of Koln, Germany)
• AA_Organic Semiconductors—Surface, Interface and Bulk Doping _6 (University of Arizona, USA)
• AA_Organic Semiconductors—Surface, Interface and Bulk Doping _7 (Stanford University, USA)
• AA_Organic Semiconductors—Surface, Interface and Bulk Doping _8 (Humboldt-University Berlin, Germany)
• AA_Organic Semiconductors—Surface, Interface and Bulk Doping _9 (Hokkaido University, Japan)
• AA_Organic Semiconductors—Surface, Interface and Bulk Doping _10 (Chiba University, Japan)