Gallium Oxide Microelectronics

Wide bandgap semiconductors have been under development for over three decades and have reached commercialization in various applications such as radio frequency communications and medium to high voltage power conversion. Looking forward, the semiconductor community searches for novel materials to improve on current generation wide bandgap semiconductor technologies. In search for higher performance components which enable greater power density and efficiency, the research community has identified a compelling material: Gallium Oxide (Ga₂O₃). The three key materials properties which dictate commercialization of a new semiconductor technology are large-area substrates, shallow carrier with mobility >100 cm²/V●s, and performance improvement through high-field strength devices. This talk will examine the favorable intrinsic material properties leading to the first ultra-wide bandgap semiconductor to approach commercialization and the discuss path to high-performance ultra-wide bandgap technology to market.