Materials Science/Device Technology for Integrated Super High K Dielectric Oxide Nanolaminates Crystalline Diamond for New Generation High Power Electronics

This abstract focus on describing the fundamental and applied materials science and device engineering to develop a new generation of transformational high power electronics based on the integration of novel multifunctional nanolaminate oxides thin films with super high dielectric constant, and single crystal diamond. Specific research and devoce evelopment to be discussed include:
Materials Science performed to develop transformational TiO_x/Al₂O₃ nanolaminates, exhibiting giant dielectric constant (up to k=1000), low leakage current (10^-8 - 10^-9 A/cm², and low losses
(tan d = 0.04), induced by a nanoscale thick Al₂O₃ layer at the top electrode nanolaminate interface. The information to be presented will include discussion of the physics responsible for the giant dielectric constant, underlined by the Maxwell-Wagner relaxation mechanism, whereby the dielectric constant is controlled by oxygen vacancies at the nanolaminate interfaces.
Materials science and device design performed to integrate the high K dielectric nanolaminates on single crystal diamond to fabricate the first integrated TiO_x/Al₂O₃ nanolaminates single crystal diamond based Metal Organic Semiconductor Field Effect Transistor devices.
Development of the lithography and RIE process to fabricate diamond-based nanoelectronic devices with integrated high K dielectric TiO_x/Al₂O₃ nanolaminates single crystal H diamond surface terminated substrate, and measurement of electrical performance of first demonstrated Metal Organic Semiconductor Field Effect Transistor devices, which showed very good promising results.
The presentation will include a discussion of materials science issues that need to be addressed to optimize the performance of future TiO_x/Al₂O₃ nanolaminates single crystal diamond based nanoelectronic devices, and investigate new HfO₂/TiO_x nanolaminates, involving the key HfO₂ used in gates of current commercial Si-based micro/nano-electronic devices.