Apr 10, 2025
5:00pm - 7:00pm
Summit, Level 2, Flex Hall C
Stefano Pecorario1,Youcheng Zhang1,Rozana Mazlumian1,Xin Chen1,Ian Jacobs1,Milos Dubajic1,Capucine Mamak1,Samuel Stranks1,Caterina Ducati1,Henning Sirringhaus1
University of Cambridge1
Stefano Pecorario1,Youcheng Zhang1,Rozana Mazlumian1,Xin Chen1,Ian Jacobs1,Milos Dubajic1,Capucine Mamak1,Samuel Stranks1,Caterina Ducati1,Henning Sirringhaus1
University of Cambridge1
Hybrid halide perovskites have emerged as promising candidates for electronic applications. However, challenges such as ion migration, electrochemical reactions with metal electrodes, and crystallization-induced defects hinder their practical implementation in devices such as field-effect transistors (FETs), thus complicating clean charge transport studies. Recently, Sn-based perovskites have shown potential to address these issues.
[1] In particular, mixed 2D-3D halide perovskite compositions have demonstrated reduced ion migration and record-breaking mobility (>50 cm
2/Vs) in FETs.
[2]In this study
[3], we investigate the role of organic cations in modulating the charge transport properties of the high-mobility Sn-based perovskite (Cs
0.1FA
0.9)
xPEA
1-xSnI
3. Through advanced FET and gated Hall measurements, we extract reliable mobility and analyze temperature-dependent trends to elucidate ion migration and polaron transport mechanisms. Structural and photophysical correlations are established through mobility measurements, GIWAXS and photoluminescence, revealing the impact of lattice distortion on charge and exciton transport. Additionally, high-resolution TEM highlights the role of interfaces in optimizing device stability and performance.
Our findings offer physical insight into optimizing 2D-3D Sn-based perovskites for high-performance electronic applications.
[1] Senanayak, S. P., et al
, Nat. Mater. 22, 216–224 (2023).
[2] Zhu, H., et al.
Nat Electron 6, 650–657 (2023).
[3] Pecorario S., Sirringhaus H., et al,
in preparation.