Colloidal II–V Semiconductor QDs Emitting Past 1.5 μm

Short-wave infrared (SWIR) emitters are essential for biomedical imaging, sensing, and optical telecommunications. Quantum dots (QDs) are particularly promising for SWIR emission owing to their tunable wavelengths and unique optoelectronic properties. This study focuses on the synthesis and optimization of Cd₃P₂ QDs as 1.5 µm emitters. By adjusting key parameters, we successfully synthesize 10 nm Cd₃P₂ QDs emitting ca. 1570 nm. The study demonstrates that surface passivation effectively reduces trap states, leading to higher photoluminescence quantum yields and accelerated emission. The findings demonstrate the potential of Cd₃P₂ QDs for advanced SWIR applications in telecommunication, highlighting the importance of controlled synthesis and effective surface passivation in achieving desired optoelectronic properties.

Keywords: Narrow-gap semiconductors, colloidal quantum dots, near-IR emitters, SWIR emitters