Intrinsically Stretchable Phototransistor for Skin-Like Visible-NIR Sensor with Polymer-QD-Polymer Multi-Layered Hybrid Films

Stretchable phototransistors play a pivotal role in the evolution of skin-inspired optoelectronic systems. Despite notable progress in developing skin-like photosensitive semiconductors, the creation of stretchable phototransistors capable of detecting a broad spectrum of wavelengths, ranging from near-infrared (NIR) to visible light, remains in its early phase. This study introduces an intrinsically stretchable phototransistor utilizing hybrid semiconductor films, composed of polymer semiconductors (PSCs) and quantum dots (QDs). The hybrid multilayered structure (PSC/QDs/PSC) exhibits extensive wavelength sensitivity from NIR to visible light, along with enhanced photosensitivity and photoresponsivity. Moreover, the device demonstrates exceptional strain-insensitive photoresponse, maintaining stable performance under 50% strain and withstanding 10,000 strain cycles. The phototransistor array, characterized by a unique dodecagon configuration of the source and drain electrodes, effectively responds to NIR and visible light even when subjected to areal strains up to 38%.