April 7 - 11, 2025
Seattle, Washington
Symposium Supporters
2025 MRS Spring Meeting & Exhibit
EL16.04.03

Flexible, Low Defect Density and Single-Layer MoS2 Piezoelectric Sensor for Slippage Detection in Soft Gripper

When and Where

Apr 9, 2025
8:45am - 9:00am
Summit, Level 4, Room 437

Presenter(s)

Co-Author(s)

Yun Li1,2,Pooi See Lee1,2

Nanyang Technological University1,The Smart Grippers for Soft Robotics (SGSR) Programme, Campus for Research Excellence and Technological Enterprise (CREATE), Singapore 1386022

Abstract

Yun Li1,2,Pooi See Lee1,2

Nanyang Technological University1,The Smart Grippers for Soft Robotics (SGSR) Programme, Campus for Research Excellence and Technological Enterprise (CREATE), Singapore 1386022
Transition metal dichalcogenides (TMDs) have garnered considerable interest due to their exceptional flexibility and superior piezoelectric properties compared to conventional piezoelectric ceramics and polymers. A key challenge in realizing their practical potential lies in the fabrication of continuous, scalable, and thickness-controlled TMD films, as their piezoelectric properties are layer-dependent. Herein, we develop a multi-holding atomic layer deposition (MH-ALD) strategy to enable the homogeneous deposition of MoS2. This approach facilitates rapid nucleation during the initial ALD cycles while mitigating the steric hindrance effect due to the sufficient feed time of precursor and reactant. Moreover, the repeated pulse-hold-purge sequence of precursor in each ALD cycle effectively eliminates physisorbed by-products, which clears the surface and promotes further lateral growth. This process demonstrates greater efficiency than the holding ALD (single pulse-hold-purge sequence of precursor per cycle, referred to as the H-ALD process), as it achieves superior coverage of single-layer MoS2. Specifically, the MH-ALD process results in a coverage rate of 99.95%, compared to 92.51% observed with the H-ALD process. Based on these mechanisms, a single-layer centimeter-scale MoS2 film with low defect density and remarkable piezoelectric performance (d11 = 4.3 pm/V) is achieved. The evolution of growth modes in the advanced ALD strategy is carefully studied on the films deposited under varying temperatures and repetition times of pulse-hold of precursor. To showcase the piezoelectric performance, both bendable and stretchable piezoelectric devices are integrated onto PET and TPU substrates respectively, demonstrating outstanding linear sensitivity (approximately 141.38 pA per 1% lateral strain for bendable one, the highest among 2D binary materials). The fabricated bendable devices exhibit superior response to uniaxial lateral strain (1-1 mode), showing an output voltage of around 1.74 V when subjected to a lateral strain of 0.88% and a bending velocity of 6 cm/s. Furthermore, the integrated bendable device is embedded into a 3D-printed pneumatic soft gripper system for detecting slippage. The sensor generates real-time signals as soon as slippage occurs, with the signal amplitude proportional to the object's weight—635.5 pA for a tomato and 92.11 pA for a grape. This feedback system enables closed-loop control, allowing the gripper to dynamically adjust its holding force to prevent further slippage.

Keywords

atomic layer deposition | thin film

Symposium Organizers

Xudong Wang, University of Wisconsin--Madison
Miso Kim, Sungkyunkwan University
Wenzhuo Wu, Purdue University
Till Fromling, Technical University of Darmstadt

Symposium Support

Bronze
APL Electronic Devices

Session Chairs

Simiao Niu
Ruoxing Wang

In this Session