MoS₂-Based Thin Film Transistors for Flexible Displays and Sensors

Thin Film Transistors (TFTs) are indispensable components in large-area electronic systems, such as LCDs, OLEDs, micro-LED displays, and tactile/pressure sensors. Within these systems, semiconductors like amorphous-Si, Poly-Si, and IGZO are frequently used in backplane circuitry. Ideal backplane TFTs exhibit high carrier mobility, a large on/off ratio, and exceptional stability.
To enhance the mechanical flexibility of these devices, Transition Metal Dichalcogenide (TMD) semiconductors, especially MoS₂, are emerging as promising alternatives. In this talk, I will discuss the fabrication process of MoS₂-based backplane TFTs designed to advance large-area displays and tactile sensors. Our approach involves synthesizing high-quality MoS₂ using a modified metal-organic chemical vapor deposition (MOCVD) process, followed by the fabrication of TFT arrays through conventional photolithography and etching techniques.
The remarkable mechanical properties of MoS₂ enable the creation of a variety of flexible devices, a feat difficult to achieve with traditional materials. Examples of such devices include wearable OLEDs, micro-LED displays, and wearable tactile sensors.