Apr 9, 2025
9:00am - 9:30am
Summit, Level 4, Room 444
F. Joseph Heremans1,2
Argonne National Laboratory1,University of Chicago2
Optically-active point defects hosted in wide band-gap semiconductors are currently being developed for use as qubits for a variety of quantum applications ranging from information processing, sensing, and communication. These systems, such as the nitrogen-vacancy center in diamond and the divacancy complexes in silicon carbide, offer a versatile platform for future quantum technologies. Here, I will present our work focused on addressing the scalability and integration challenges of spin qubits within quantum relevant material hosts along with the development of novel materials platforms. This includes work on synthesizing and integrating diamond membrane nanostructures, local creation methods using ultra-fast laser pulses, as well as a discussion of emerging defect systems in silicon carbide and novel oxide hosts. I will also describe novel methods to better understand what limits the fundamental properties of these qubits to help pave the way for defect-based quantum technologies.