Advancing Radiation-Hard Electronics with Group-III Nitride Semiconductors

Group-III nitride semiconductors, known for their wide bandgap, mechanical, thermal, and electronic properties, are widely used in applications ranging from high-power electronics to solid-state lighting. Their high radiation resistance is also being investigated for next-generation radiation-hard electronics, particularly in layered structures such as High Electronic Mobility Transistor, quantum wells (QWs) and other 2D electron gas systems.

Here, we examine the response of GaN, In_xGa_(1-x)N, and InGaN/GaN multi-QW systems, to strongly ionising radiation like Swift Heavy Ions (SHI). Using the Two-Temperature Model (TTM), Molecular Dynamics, and Transmission Electron Microscopy, we show that GaN tends to recrystallise in the ion-melted region, leading to high thresholds for permanent track formation [1] and diverse ion track morphologies [2]. Notably, incorporating In into GaN up to an optimal concentration further enhances radiation resistance. However, at higher InN molar fractions, recrystallisation is significantly hindered, resulting in more damage.

We also explore SHI effects on InGaN/GaN QWs, where simulations suggest that the high electronic conductivity of the 3 nm InGaN layer efficiently dissipates the energy deposited by the ion, reducing radiation damage across the entire structure. These findings offer potential for new radiation damage mitigation strategies and device designs, while predicting the functional response of these devices under radiation.

[1] M. C. Sequeira et al., Communications Physics, 4 (2021) 51.
[2] M. C. Sequeira et al., Small (2022), 2102235