Materials Science and Device Technology Development for Interface-Engineered Super High-K Dielectric Nanolaminate-Based Oxides / Crystalline Diamond for New Generation High Power Electronics

This abstract focus on describing the fundamental and applied materials science and engineering being performed to develop a new generation of transformational high-power electronics based on the integration of novel multifunctional nanolaminate-oxides thin films, with super high-dielectric constant, and single crystal diamond. Specific R&D to be discussed include:<br/>Materials Science performed to develop transformational TiO_x/Al₂O₃ nanolaminates, exhibiting<br/>giant dielectric constant (up to k=1000), low leakage current (10^-8 - 10^-9 A/cm², and low losses<br/>(tan d = 0.04), induced by a nanoscale thick Al₂O₃ layer at the top electrode/nanolaminate interface. The information to be presented will include discussion of the physics responsible for the giant dielectric constant, underlined by the Maxwell-Wagner relaxation mechanism, whereby the dielectric constant is controlled by oxygen vacancies at the nanolaminate interfaces.<br/>Materials science and device design performed to integrate the high-K dielectric nanolaminates on single crystal diamond to fabricate the first integrated TiO_x/Al₂O₃ nanolaminates / single crystal diamond MOSFET devices.<br/>Development of the lithography/RIE process to fabricate diamond-based micro / nano-electronic devices with integrated high-K dielectric TiO_x/Al₂O₃ nano-laminates/single crystal H-diamond surface terminated substrate, and measurement of electrical performance of first unoptimized MOSFET devices, which showed very good promising results.<br/>The presentation will include a discussion of materials science issues that need to be addressed to optimize the performance of future TiO_x/Al₂O₃ nano-laminates/single crystal diamond-based micro/ nano-electronic devices, and investigate new HfO₂/TiO_x nanolaminates, involving the key HfO₂ used in gates of current commercial Si-based micro/nano-electronic devices.