Apr 24, 2024
5:00pm - 7:00pm
Flex Hall C, Level 2, Summit
Zhigang Xiao1,Kevin Qian1,Ibraheem Giwa1,Fabian Sanchez1,Elton Mawire1,Sherwood Dong1,Eric Smith1,Qunying Yuan1
Alabama A&M University1
Zhigang Xiao1,Kevin Qian1,Ibraheem Giwa1,Fabian Sanchez1,Elton Mawire1,Sherwood Dong1,Eric Smith1,Qunying Yuan1
Alabama A&M University1
In this study, we report the fabrication of molybdenum disulfide (MoS<sub>2</sub>) thin films–based electronic devices. Nanostructured molybdenum disulfide (MoS<sub>2</sub>) thin films are grown as the active semiconducting channel material for the fabrication of MoS<sub>2</sub>-based field-effect transistors using plasma-enhanced atomic layer deposition (ALD). MoS<sub>2</sub>–based electronic devices such as MoS<sub>2</sub> field-effect transistors, inverters, and ring-oscillators are fabricated with the ALD-grown MoS<sub>2</sub> film using the clean room-based micro- and nano-fabrication techniques. Hydrogen sulfide (H<sub>2</sub>S) gas is used as the S source in the growth of molybdenum disulfide (MoS<sub>2</sub>) while molybdenum (V) chloride (MoCl<sub>5</sub>) powder is used as the Mo source. The MoS<sub>2</sub> film will be analyzed by the high-resolution tunnel electron micrograph (HRTEM), scanning electron micrograph (SEM), X-ray photoelectron spectroscopy (XPS) analysis and Raman spectrum analysis. The fabricated MoS<sub>2</sub> device wafer will be annealed at high-temperatures (800 – 900 <sup>o</sup>C), and the electrical property of the MoS<sub>2</sub>–based electronic devices will be measured before and after the high-temperature annealing and will be compared. The characterization results of the nanostructured molybdenum disulfide (MoS<sub>2</sub>) thin films and the measurement results on the fabricated MoS<sub>2</sub>–based electronic devices will be reported in the 2024 MRS Spring Meeting.<br/>Acknowledgements: The research is supported by National Science Foundation under Grant No. ECCS-2100748.