Fabrication of Nanostructured Molybdenum Disulfide (MoS₂) Thin Film–Based Electronic Devices

In this study, we report the fabrication of molybdenum disulfide (MoS₂) thin films–based electronic devices. Nanostructured molybdenum disulfide (MoS₂) thin films are grown as the active semiconducting channel material for the fabrication of MoS₂-based field-effect transistors using plasma-enhanced atomic layer deposition (ALD). MoS₂–based electronic devices such as MoS₂ field-effect transistors, inverters, and ring-oscillators are fabricated with the ALD-grown MoS₂ film using the clean room-based micro- and nano-fabrication techniques. Hydrogen sulfide (H₂S) gas is used as the S source in the growth of molybdenum disulfide (MoS₂) while molybdenum (V) chloride (MoCl₅) powder is used as the Mo source. The MoS₂ film will be analyzed by the high-resolution tunnel electron micrograph (HRTEM), scanning electron micrograph (SEM), X-ray photoelectron spectroscopy (XPS) analysis and Raman spectrum analysis. The fabricated MoS₂ device wafer will be annealed at high-temperatures (800 – 900 ^oC), and the electrical property of the MoS₂–based electronic devices will be measured before and after the high-temperature annealing and will be compared. The characterization results of the nanostructured molybdenum disulfide (MoS₂) thin films and the measurement results on the fabricated MoS₂–based electronic devices will be reported in the 2024 MRS Spring Meeting.
Acknowledgements: The research is supported by National Science Foundation under Grant No. ECCS-2100748.