April 22 - 26, 2024
Seattle, Washington
May 7 - 9, 2024 (Virtual)

Event Supporters

2024 MRS Spring Meeting
EL06.10.04

Bridging Thin Films Growth and Advanced Electron Microscopy to Uncover Structure-Property Correlations in Oxide Electronics

When and Where

Apr 26, 2024
2:30pm - 2:45pm
Room 343, Level 3, Summit

Presenter(s)

Co-Author(s)

Robert Winkler1,Alexander Zintler2,Oscar Recalde1,Déspina Nasiou1,Lambert Alff1,Leopoldo Molina-Luna1

TU Darmstadt1,University of Antwerp2

Abstract

Robert Winkler1,Alexander Zintler2,Oscar Recalde1,Déspina Nasiou1,Lambert Alff1,Leopoldo Molina-Luna1

TU Darmstadt1,University of Antwerp2
Reactive Molecular Beam Epitaxy (RMBE), among other Physical Vapor Deposition (PVD) techniques, can precisely fabricate high-quality semiconductor heterostructures necessary for complex oxide electronics [1]. Their composition and crystallinity can be engineered through careful selection of growth parameters [2], [3], however are subject to the underlying layer. Here, miscut, composition and lattice mismatch impact texture transfer and thus the resulting microstructure [4].<br/>Typically, RMBE is used to grow epitaxial thin films, yet textured thin films with defects might be more promising in oxide electronics applications like superconductors or emerging memories like resistive random access memory (RRAM). In our study, we investigated the texture relationship of TiN grown on c-cut sapphire by combining ion channeling contrast imaging (ICCI) with pole figure mapping. In addition, textured HfO<sub>2</sub> has been in situ grown on optimized TiN layers to investigate the impact of extended defects on RRAM performance by using atom probe tomography (APT) and operando electron microscopy. Our results indicate that a certain miscut of c-cut sapphire promotes distinct types of extended defects, which, as confirmed by elemental composition investigations using APT, are essential for RRAM operations.<br/>Combining synthesis, macroscopic and microscopic investigation, and device characterization can bridge the information gaps required to further oxide electronics.<br/>References:<br/>[1] <i>Beam Technologies for Integrated Processing</i>. Washington, D.C.: National Academies Press, 1992. doi: 10.17226/2006.<br/>[2] R. Winkler <i>et al.</i>, ‘Controlling the Formation of Conductive Pathways in Memristive Devices’, <i>Advanced Science</i>, vol. n/a, no. n/a, p. 2201806, doi: 10.1002/advs.202201806.<br/>[3] S. U. Sharath <i>et al.</i>, ‘Control of Switching Modes and Conductance Quantization in Oxygen Engineered HfOx based Memristive Devices’, <i>Advanced Functional Materials</i>, vol. 27, no. 32, p. 1700432, 2017, doi: 10.1002/adfm.201700432.<br/>[4] A. Zintler <i>et al.</i>, ‘Enhanced Conductivity and Microstructure in Highly Textured TiN1–x/c-Al2O3 Thin Films’, <i>ACS Omega</i>, vol. 7, no. 2, pp. 2041–2048, Jan. 2022, doi: 10.1021/acsomega.1c05505.

Keywords

atom probe tomography | molecular beam epitaxy (MBE)

Symposium Organizers

Aiping Chen, Los Alamos National Laboratory
Woo Seok Choi, Sungkyunkwan University
Marta Gibert, Technische Universität Wien
Megan Holtz, Colorado School of Mines

Symposium Support

Silver
Korea Vacuum Tech, Ltd.

Bronze
Center for Integrated Nanotechnologies, Los Alamos National Laboratory
Radiant Technologies, Inc.

Session Chairs

Nicholas Cucciniello
Megan Holtz
Yachin Ivry

In this Session