The impact of threading dislocation lines on cubic boron nitride’s low-field electron mobility

Threading dislocation lines are present within boron nitride’s cubic phase. Within the framework of a relaxation-time approximation based low-field electron drift mobility formalism, we incorporate the treatment of threading dislocation line related scattering into this analytical framework. How the presence of threading dislocation lines influences the low-field electron transport of this material will be examined. Threading dislocation lines are found to make a significant contribution to cubic boron nitride’s low-field electron transport response. The device implications of these results are then examined. A new approach to characterizing the importance of the various scattering processes is introduced as a corollary to this analysis.