Tailoring The Optoelectronic Properties of Tin-Based Perovskite Light-Emitting Diodes

Two-dimensional perovskite thin films have shown tremendous potential as active materials for light-emitting diode (LED) applications, thanks to their remarkable optoelectronic properties and high environmental stability compared to their three-dimensional counterparts. However, achieving precise control over their composition and morphology remains a significant challenge. To overcome these issues, a strong coordinating agent, several functionalized bulky cations, and an increasing number of precursor materials have been applied. In this study, we investigate the influence of additives on the growth and performance of 2D tin-based perovskite thin films in nonoxidative solvent. We employed advanced characterization techniques such as UV-Vis absorption spectroscopy, X-ray diffraction, scanning electron microscopy, and photoluminescence spectroscopy to understand its effect. By systematically varying the processing parameters, including the amount of additive and the deposition conditions, we gain insights into the underlying mechanisms governing the film formation and properties. As a result, the 2D tin-based perovskite LED device had a low turn-on voltage of 1.75 V, and a maximum external quantum efficiency of ~2.2% in a nonoxidative solvent. The optimized thin film compositions and processing conditions from this research will facilitate the development of good-performance tin-based perovskite LEDs with enhanced external quantum efficiency, stability, and color purity. Furthermore, this work will contribute to the advancement of additive engineering strategies for the scalable fabrication of perovskite-based LEDs, fostering their integration into next-generation solid-state lighting technologies.