Engineering Magnetic Tunnel Junctions Using He⁺ Ion Radiation

We have developed a unique manufacturing process based on He⁺ ion irradiation to tailor the structural properties of ultra-thin magnetic materials at atomic level and enhance their performance. The utilization of light ions provides the precise control of inter-atomic displacements through low energy transfer. The key feature of the technology is the post-growth control at the atomic scale of structural properties and the related magnetic properties. When realized through a mask this technology enables lateral modulation of magnetic properties without any physical etching.<br/><br/>In this talk, I will demonstrate that He⁺ ion irradiation can be used to enhance the performance of Magnetic Tunnel Junctions with perpendicular magnetic anisotropy for application to MRAM, magnetic sensors and neuromorphic computing.