Diamond Device Technology Using a FIB Dual Beam—Contacts and FET Fabrications

For the development of new diamond electronic devices, technological operations in clean-rooms are a very heavy procedure to carry out proof of concepts. In particular, Schottky and ohmic contacts as well as gate fabrication of MOSFET, requires heavy technological steps where the size of the substrate also difficult such operations.<br/><br/>In this context, the FIB-dual beam (focused ions beam joined to a SEM e-beam) facility can make much simpler the consecution of the device. In the present contribution, FIB related technological steps carried out using modes as electron beam lithography (EBL), low T mask deposition or direct Ga+-Beam processes will be presented. The consecution of Schottky diodes, ohmic contacts and transistors will be shown as well as their TEM related characterization.<br/><br/>First ohmic and Schottky contact consecution will be presented with TEM-EELS characterization of the metal/diamond interfaces. Second, photo-switch diamond structures fabrication and its photo-electrical characterization will show the huge potential of the FIB-dual beam for the prototyping of diamond semiconducting devices.