Enhancing Performance of Single-Bridge Channel Field Effect Transistors Through MoS2 Doping on Graphene and Integration with Hexagonal Boron Nitride

This reearch presents the design and manufacturing of a Single Bridge Channel Field Effect Transistor (SBCFET) using 2D materials, which includes the integration of graphene as the channel and hexagonal boron nitride (h-BN) as the gate dielectric and the doping technique on graphene with Molybdenum disulfide (MoS2). The combination of MoS2 and graphene shows the unique electrical properties, such as the high carrier mobility of graphene with the MoS2, which significantly enhances the performance of SBCFETs’ mobility. This study shapes a strong comparison between the current SBCFET and the conventional FinFET fabrication with the improvement of doping techniques.The shorter gatelength design and modification of carrier concentration of graphene positively affecst the mobility of the transistor. The MoS2-enhanced doping graphene SBCFETs demonstrates advanced performances in current control and higher carrier mobility. Our research shows a significant improvement over conventional silicon-based FETs. The fabrication process includes the Scotch tape method for obtaining high-quality materials including graphene, MoS2, and h-BN. This methodology builds a solid foundation for precise doping and layering techniques for the device fabrication. Additionally, Electron-beam lithography (EBL) is used for nanoscale patterning, and atomic layer deposition (ALD) for gate dielectric formation with the h-BN. The results of this study highlights the potential of MoS2 and graphene integration in enhancing the mobility of next-generation transistors. This study provides valuable insights into the practical application of 2D materials in semiconductor devices, paving the way for future innovations in the field of nanoelectronics.