Dec 4, 2024
5:15pm - 5:30pm
Hynes, Level 2, Room 206
Alhassan Issaka1,Assel Aitkaliyeva1,Michael Tonks1,Simon Phillpot1
University of Florida1
Alhassan Issaka1,Assel Aitkaliyeva1,Michael Tonks1,Simon Phillpot1
University of Florida1
High-energy atomic interaction processes are fundamental to a wide range of advanced material technologies, including semiconductor processing, electron microscopy and nuclear power generation. In this study, we employ Molecular Dynamics (MD) simulations to investigate the impact of the primary knock-on atom (PKA) approach on aluminum, focusing on defect evolution resulting from radiation damage. We provide insights into the high-temperature behavior of radiation cascade in aluminum and quantify the extent of damage as a function of the deposited energy using the Norgett−Robinson−Torrens displacements per atom (NRT-dpa) model. We also evaluate defect formation energies for systems containing various grain boundaries and characterize defect evolution and migration. Additionally, we quantify the impact of the distance of the PKA from the grain boundary on microstructure evolution. Our findings provide valuable insights into the effects of radiation damage on aluminum.