Next-Generation Ferroelectric Devices Optimizing HZO and Graphene Hetero Structures

Ferroelectric devices have emerged due to lower power consumption, faster switching speeds, and improved data retention. Moreover, HZO(Hf0.5Zr0.5O2) films have shown high permittivity, which refers to the material's ability to store electrical energy when an electric field is applied, high dielectric constant, making it suitable for applications where high charge storage density is desired, such as in non-volatile memory devices and excellent endurance making them ideal for repeated switching cycles without significant degradation.<br/>In this study, we fabricated 10-nm-thick ferroelectric HZO(Hf0.5Zr0.5O2) thin films as a Ferroelectric dielectric with Graphene film as a semiconductor. The ferroelectric properties of HZO were enhanced through control stoichiometries and post-metal annealing, leading to the Orthorhombic phase—synthesis of Large-Scale 3D-HZO and 2D-Graphene Films for FE-FET via Wet Transfer Method with Preservation of Graphene Degradation. The ferroelectric properties of HZO were enhanced through control stoichiometries and Post Metal Annealing, leading to Orthorhombic phase and PFM Amplitude and Phase, P-E, and C-V curve provide evidence supporting the presence of spontaneous remanent polarization in the HZO. We aim to produce large-scale FE-FETs based on HZO and graphene for next-generation nonvolatile memory devices. The final goal is to achieve wide hysteresis windows of approximately 2V, a high current on/off ratio of about 10^6, and a subthreshold swing of 250mV in the transfer characteristics of this Fe-FET device. These HZO and graphene Fe-FET devices may be attractive for various applications in advanced electronics. These optimized HZO and graphene Fe-FET devices have great potential for applications in neuromorphic computing, artificial intelligence, and energy-efficient electronics.