Interface Engineering for the Efficient Sb₂Se₃ Thin Film Solar Cell

Antimony chalcogenide (Sb2X3, X=S, Se, Te) thin film solar cells have garnered significant interest due to their optimal bandgap, high absorption coefficient, and earth-abundant constituent elements. Interface engineering plays a pivotal role in optimizing the performance of these solar cells, as the interfaces between different layers critically influence charge carrier dynamics. This talk focuses on the systematic investigation and engineering of interfaces in Sb2X3-based thin film solar cells to enhance their efficiency and stability. By employing techniques such as sputtering, and chemical bath deposition (CBD), precise control over interface properties was achieved. The introduction of buffer layers, passivation treatments, and surface modifications were explored to mitigate recombination losses and improve charge extraction. Advanced characterization methods including X-ray photoelectron spectroscopy (XPS), were utilized to analyze the interfacial properties and their impact on device performance. The findings highlight the critical importance of interface quality and the potential of tailored interface engineering to unlock higher efficiencies in antimony chalcogenide thin film solar cells. This work provides a pathway for further optimization and commercial viability of Sb2X3 solar cells, contributing to the advancement of sustainable photovoltaic technologies.