Dec 4, 2024
4:15pm - 4:30pm
Hynes, Level 2, Room 207
Ming Yang1
The Hong Kong Polytechnic University1
Two-dimensional (2D) semiconductors such as molybdenum disulfide (MoS2) could potentially replace silicon in future electronic devices. However, the high-performance integration of high-
k dielectrics on 2D semiconductors remains a grand challenge. In this talk, we show that for the interface between conventional high-
k dielectrics and 2D MoS
2, hydrogenation is a desired approach to passivate the dangling bonds and improve the interface properties, in which the hydrogenation can selectively occur at high-
k dielectrics such as Si
3N
4 and HfO
2, and do not affect the 2D semiconductor MoS
2. We further demonstrate the improved performance for hydrogenated interface of HfO
2/MoS
2, as evidenced by the increased carrier mobility, narrow hysteresis window, and much reduced interfere state density. We find that this selective hydrogenation strategy can be generalized to any interface of high-
k dielectrics and 2D semiconductors, where there exists free energy difference for hydrogen adsorption between them. Finally, we report a data-driven approach to accelerate the development of various promising inorganic molecular crystals as the high-performance high-
k dielectrics for 2D MoS
2 based electronic devices. These results deepen the understanding the interface of 2D semiconductors and high-
k dielectrics, and could be useful for developing a broad range of high-performance 2D electronic and optoelectronic devices.