Integrated Methods for Plasma and Surface Monitoring in Complex Etch Applications

The continuous shrinkage of critical dimensions, introduction of new materials, and increase of integration complexity in semiconductor technology imposes stringent requirements on plasma processing techniques. A fundamental understanding of the plasma-surface interaction mechanisms in these applications is paramount to enabling better etch performance and developing novel solutions to complex processes. These challenges necessitate modern surface and gas phase diagnostic techniques to meet these complex requirements and drive advancements in technology. Examples include comprehensive surface analysis without vacuum break, precise in-situ etch and deposition rate measurements and control, plasma parameter diagnostics, and charged and electrically neutral species transport analysis. In this presentation, we describe these diagnostic methods and techniques, their practical utilization for different etch applications (including vertical and lateral etch for “3D”), and their resulting correlation and analysis.