December 1 - 6, 2024
Boston, Massachusetts
Symposium Supporters
2024 MRS Fall Meeting & Exhibit
CH06.04.07

Leveraging 4D-USEM in Probing Charge Carriers at the Surface of Single Crystal Perovskites

When and Where

Dec 3, 2024
11:15am - 11:30am
Sheraton, Third Floor, Fairfax A

Presenter(s)

Co-Author(s)

Razan Nughays1,Khulud Almasabi1,Sarvarkhodzha Nematulloev1,Chen Yang1,Lijie Wang1,Issatay Nadinov1,George Harrison1,Bian Tieyuan2,Jianfeng Zhao3,Jun Yin2,Shadi Fatayer1,Osman Bakr1,Omar F. Mohammed1

King Abdullah University of Science and Technology1,The Hong Kong Polytechnic University2,Chinese Academy of Sciences3

Abstract

Razan Nughays1,Khulud Almasabi1,Sarvarkhodzha Nematulloev1,Chen Yang1,Lijie Wang1,Issatay Nadinov1,George Harrison1,Bian Tieyuan2,Jianfeng Zhao3,Jun Yin2,Shadi Fatayer1,Osman Bakr1,Omar F. Mohammed1

King Abdullah University of Science and Technology1,The Hong Kong Polytechnic University2,Chinese Academy of Sciences3
Perovskite single crystals offer revolutionary light-harvesting technology, showcasing exceptional optoelectronic properties and device performance. Achieving stable perovskite single crystals with enhanced optical properties and device performance is crucial for guiding material scientists, chemists, and engineers in designing superior crystals with very low defect concentration, if any. Despite the extensive investigations on their photo-induced charge-carriers dynamics, most of the time-resolved techniques focus mainly on bulk properties rather than surface characteristic which plays a crucial role for their optoelectronic-device performance. Thus, understanding charge carrier and surface defects at atomic level and femtoseconds scale is necessary. Herein, four-dimensional ultrafast scanning electron microscopy (4D-USEM) have been utilized to probing the photo-generated carrier transport at the first few nanometers of the top surface In this technique, a pulsed primary electron beam generated optically by a UV excitation pulse from a cooled Schottky field-emitter tip produces secondary electrons that are sensitive to the localization of the charge carrier on surfaces and interfaces of the photoactive materials. Additionally, density functional theory (DFT) was conducted to unfold the reasons behind the formation of both defect centers and ions migration. In this work, four different samples of single crystal perovskites were investigated; MAPbI<sub>3 </sub>(001), MAPbI<sub>3 </sub>(100), FA<sub>0.6</sub>MA<sub>0.4</sub>PbI<sub>3</sub> (FA-rich) and FA<sub>0.4</sub>MA<sub>0.6</sub>PbI<sub>3</sub> (MA-rich). Our time-resolved results revealed that the orientations and compositions strongly affect charge carrier behavior. For example, MAPbI<sub>3</sub> (100) and MA-rich samples displayed a shorter carrier lifetime and exhibited a dark image-contrast in the SUEM experiments. Whereas the lifetime and concentration of defects were notably improved and reduced, respectively in case of MAPbI<sub>3</sub> (001) and FA-rich samples. These findings shed the light on the importance of understanding the role of orientation/termination and the cation’s selection on the charge carrier behavior at the first few nanometers to assist engineering high-performance optoelectronic devices based on single crystal perovskites.

Keywords

diffusion | scanning electron microscopy (SEM)

Symposium Organizers

Omar F. Mohammed, KAUST
Libai Huang, Purdue University
Volkan Ortalan, University of Connecticut
Ding-Shyue (Jerry) Yang, University of Houston

Session Chairs

Ye-Jin Kim
Volkan Ortalan
Ding-Shyue (Jerry) Yang

In this Session