Amorphous Gallium Nitride by Low-Temperature MOCVD Growth for Back-End-Of-Line Transistors

Nov 29, 2022
4:15pm - 4:30pm

Sheraton, 2nd Floor, Back Bay D

Tian Sun

Guanyu Zhou

Jaemin Shin

Tian Sun¹,Guanyu Zhou¹,Jaemin Shin¹,Christopher Hinkle¹

University of Notre Dame¹

chemical vapor deposition (CVD) (deposition) | III-V

Ying-Hao Chu, National Tsing Hua University

Catherine Dubourdieu, Helmholtz-Zentrum Berlin / Freie Universität Berlin

Olga Ovchinnikova, Oak Ridge National Laboratory

Bhagwati Prasad, Indian Institute of Science

Bronze
CRYOGENIC LIMITED

Olga Ovchinnikova

John Plombon