Simulation of Switching Processes Inside Bilayer Valence Change Memory Cells by a Drift-Diffusion Model

Nov 30, 2022
2:00pm - 2:15pm

Sheraton, 2nd Floor, Back Bay D

Nils Sommer

Rainer Waser

Nils Sommer¹,Stephan Menzel¹,Rainer Waser^1,2

Peter Grünberg Institute 7¹,Institute for Materials in Electrical Engineering 2²

electronic structure

Ying-Hao Chu, National Tsing Hua University

Catherine Dubourdieu, Helmholtz-Zentrum Berlin / Freie Universität Berlin

Olga Ovchinnikova, Oak Ridge National Laboratory

Bhagwati Prasad, Indian Institute of Science

Bronze
CRYOGENIC LIMITED

Regina Dittmann

Bhagwati Prasad