Recessed Gate Enhancement-Mode Ultrawide Bandgap Al_xGa_1-xN Channel MOSHFET with Drain Current 0.48 A/mm and Threshold Voltage +3.6 V

Apr 19, 2021
10:00pm - 10:15pm

EL04

Asif Khan

Shahab Mollah¹,Kamal Hussain¹,Abdullah Mamun¹,Mikhail Gaevski¹,Grigory Simin¹,MVS Chandrashekhar¹,Asif Khan¹

University of South Carolina¹

Hongping Zhao, The Ohio State University

Masataka Higashiwaki, National Institute of Information & Comm Tech

Robert Kaplar, Sandia National Laboratories

Julien Pernot, University of Grenoble

Silver
Taiyo Nippon Sanso

Nasim Alem

Masataka Higashiwaki

Hongping Zhao

Recessed Gate Enhancement-Mode Ultrawide Bandgap AlxGa1-xN Channel MOSHFET with Drain Current 0.48 A/mm and Threshold Voltage +3.6 V