MOCVD Epitaxy of β-(Al_xGa_1−x)₂O₃ Films on (100) and (-201) β-Ga₂O₃ Substrates with Al Compositions up to 52%

Apr 19, 2021
2:10pm - 2:25pm

EL04

Zixuan Feng

Jinwoo Hwang

A F M Anhar Uddin Bhuiyan¹,Zixuan Feng¹,Jared Johnson¹,Hsien-Lien Huang¹,Jinwoo Hwang¹,Hongping Zhao¹

The Ohio State University¹

oxide | thin film | vapor phase epitaxy (VPE)

Hongping Zhao, The Ohio State University

Masataka Higashiwaki, National Institute of Information & Comm Tech

Robert Kaplar, Sandia National Laboratories

Julien Pernot, University of Grenoble

Silver
Taiyo Nippon Sanso

Sriram Krishnamoorthy

Hongping Zhao

MOCVD Epitaxy of β-(AlxGa1−x)2O3 Films on (100) and (-201) β-Ga2O3 Substrates with Al Compositions up to 52%