618-V 2.63-mΩ cm² NO₂ P-Type Doped Diamond MOSFETs on a High-Quality Heteroepitaxial Diamond Layer

Apr 20, 2021
8:55am - 9:10am

EL04

Makoto Kasu

Koji Koyama

Makoto Kasu¹,Niloy Chandra Saha¹,Seong-Woo Kim²,Yuki Kawamata²,Koji Koyama²,Toshiyuki Oishi¹

Saga University¹,Adamant Namiki Precision Jewel Co., Ltd.²

chemical vapor deposition (CVD) (chemical reaction) | diamond

Hongping Zhao, The Ohio State University

Masataka Higashiwaki, National Institute of Information & Comm Tech

Robert Kaplar, Sandia National Laboratories

Julien Pernot, University of Grenoble

Silver
Taiyo Nippon Sanso

Robert Nemanich

Julien Pernot

618-V 2.63-mΩ cm2 NO2 P-Type Doped Diamond MOSFETs on a High-Quality Heteroepitaxial Diamond Layer