Dielectric Properties, Electronic Transitions and Infrared Active Optical Phonon Modes of Molecular Beam Epitaxy Sc_xAl_1-xN Determined by Spectroscopic Ellipsometry

Apr 18, 2021
1:45pm - 2:00pm

EL04

Alyssa Mock

Alan Jacobs

Eric Jin

Marko Tadjer

Alyssa Mock¹,Alan Jacobs²,Eric Jin¹,Matthew Hardy²,Marko Tadjer²

NRC Research Associateship Programs¹,U.S. Naval Research Laboratory²

dielectric properties | electronic structure | molecular beam epitaxy (MBE)

Hongping Zhao, The Ohio State University

Masataka Higashiwaki, National Institute of Information & Comm Tech

Robert Kaplar, Sandia National Laboratories

Julien Pernot, University of Grenoble

Silver
Taiyo Nippon Sanso

Bruno Daudin

Robert Kaplar

Dielectric Properties, Electronic Transitions and Infrared Active Optical Phonon Modes of Molecular Beam Epitaxy ScxAl1-xN Determined by Spectroscopic Ellipsometry