Impact of Oxygen Concentration at the HfO_x/Ti Interface on the Behavior of HfOx Filamentary Memristors

Nov 30, 2021
8:00pm - 10:00pm

Hynes, Level 1, Hall B

Jinho Hah

Matthew West

Riley Hanus

Eric Vogel

Jinho Hah¹,Matthew West¹,Fabia Farlin Athena¹,Riley Hanus¹,Eric Vogel¹,Samuel Graham¹

Georgia Institute of Technology¹

interface | oxidation | x-ray photoelectron spectroscopy (XPS)

Paschalis Gkoupidenis, Max Planck Institute

Priyadarshini Panda, Yale University

Francesca Santoro, Istituto Italiano di Tecnologia

Yoeri van de Burgt, Technische Universiteit Eindhoven

Bronze
Neuromorphic Computing and Engineering (NCE) | IOP Publishing

Impact of Oxygen Concentration at the HfOx/Ti Interface on the Behavior of HfOx Filamentary Memristors