Electric Double Layer Gating of Two-Dimensional Field-Effect Transistors Using a Single-Ion Conductor

When and Where

Dec 2, 2019
4:30pm - 4:45pm

Hynes, Level 3, Room 312

Presenter(s)

Ke Xu

Jierui Liang

Eli Bostian

Aaron Woeppel

Hangjun Ding

Eric Beckman

Susan Fullerton

Co-Author(s)

Ke Xu¹,Jierui Liang¹,Eli Bostian¹,Aaron Woeppel¹,Hangjun Ding¹,Eric Beckman¹,Susan Fullerton¹

University of Pittsburgh¹

Keywords

electrical properties

Symposium Organizers

Zakaria Al Balushi, University of California, Berkeley

Deep Jariwala, University of Pennsylvania

Olga Kazakova, National Physical Laboratory

Amber McCreary, National Institute of Standards and Technology

Symposium Support

Gold
AIXTRON SE

Silver
2D Crystal Consortium - Materials Innovation Platform (2DCC-MIP)

Bronze
Accurion Inc.
IOP Publishing Ltd - 2D Materials
Scienta Omicron, Inc.

Session Chairs