Ultra-Thin SiO_x Prepared by PECVD N₂O Plasma as Tunnelling Layer for Poly-SiO_x Carrier-Selective Passivating Contacts

Dec 2, 2019
10:45am - 11:00am

Sheraton, 3rd Floor, Fairfax B

Leo Franco

Paul Procel

Miro Zeman

Paul Procel¹,Guangtao Yang¹,Leo Franco¹,Manvika Singh¹,Luana Mazzarella¹,Arthur Weeber^1,2,Olindo Isabella¹,Miro Zeman¹

Delft University of Technology¹,ECN part of TNO²

thin film

David Young, National Renewable Energy Laboratory

Stefaan De Wolf, King Abdullah University of Science and Technology

Kaining Ding, Research Center Juelich

Takuya Matsui, National Institute of Advanced Industrial Science and Technology

Bronze
Forschungszentrum Jülich GmbH
National Renewable Energy Laboratory
Sinton Instruments

Stefaan De Wolf

Kaining Ding

Sarah Kajari-Schroder

David Young

Ultra-Thin SiOx Prepared by PECVD N2O Plasma as Tunnelling Layer for Poly-SiOx Carrier-Selective Passivating Contacts