December 1 - 6, 2019
Boston, Massachusetts
2019 MRS Fall Meeting
FF01.10.03
Contact Resistance Engineering in MoS2 Using Hexagonal Boron Nitride
When and Where
Dec 3, 2019
8:00pm - 10:00pm
8:00pm - 10:00pm
Hynes, Level 1, Hall B
Presenter(s)
Co-Author(s)
Taesoo Kim1,2,Hyun Kim1,Young Hee Lee1,3
Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), 16419,1,Sungkyunkwan University2,Sungkyunkwan University (SKKU)3
Keywords
electrical properties
Symposium Organizers
Zakaria Al Balushi, University of California, Berkeley
Deep Jariwala, University of Pennsylvania
Olga Kazakova, National Physical Laboratory
Amber McCreary, National Institute of Standards and Technology
Symposium Support
Gold
AIXTRON SE
Silver
2D Crystal Consortium - Materials Innovation Platform (2DCC-MIP)
Bronze
Accurion Inc.
IOP Publishing Ltd - 2D Materials
Scienta Omicron, Inc.
AIXTRON SE
Silver
2D Crystal Consortium - Materials Innovation Platform (2DCC-MIP)
Bronze
Accurion Inc.
IOP Publishing Ltd - 2D Materials
Scienta Omicron, Inc.
Session Chairs
Zakaria Al Balushi
Deep Jariwala
Olga Kazakova
Amber McCreary