April 2 - 6, 2018
Phoenix, Arizona
2018 MRS Spring Meeting
EP04.09.01
Carrier Lifetime Control in 4H-SiC Epitaxial Growth by Vanadium Doping
When and Where
Apr 5, 2018
10:15am - 10:45am
10:15am - 10:45am
PCC North, 200 Level, Room 221 B
Presenter(s)
Co-Author(s)
Hidekazu Tsuchida1,Koichi Murata1,Tetsuya Miyazawa1,Takeshi Tawara2,3,Masaki Miyazato2,3
Central Research Institute of Electric Power Industry (CRIEPI)1,National Institute of Advanced Industrial Science and Technology (AIST)2,Fuji Electric Co., Ltd.3
Keywords
compound | defects | vapor phase epitaxy (VPE)
Symposium Organizers
Osamu Ueda, Kanazawa Institute of Technology
Robert Herrick, Intel Corporation
Matteo Meneghini, University of Padova
Kenji Shiojima, University of Fukui
Symposium Support
MRS Invitation to Publish
All authors are invited to submit articles based on their 2018 MRS Spring
Meeting presentations to journals in the MRS portfolio.
(www.mrs.org/publications-news) Papers submitted and accepted for
publication in MRS Advances (www.mrs.org/mrs-advances) will be
available as symposium collections. Visit the MRS/Cambridge University
Press Publications Booth #100 in the Exhibit Hall to learn more, including
MRS Advances print options available at special rates during the meeting
week only.
All authors are invited to submit articles based on their 2018 MRS Spring
Meeting presentations to journals in the MRS portfolio.
(www.mrs.org/publications-news) Papers submitted and accepted for
publication in MRS Advances (www.mrs.org/mrs-advances) will be
available as symposium collections. Visit the MRS/Cambridge University
Press Publications Booth #100 in the Exhibit Hall to learn more, including
MRS Advances print options available at special rates during the meeting
week only.
Session Chairs
Yoriko Tominaga
Osamu Ueda