April 2 - 6, 2018
Phoenix, Arizona
2018 MRS Spring Meeting
MA02.05.14

Ultrathin Ion-Gel Film Displaying High Capacitance at Megahertz Switching Frequency—A Promising Solid-State Gate Insulator Material, for Low-Voltage Thin-Film Transistors, Enabled by Initiated Chemical Vapor Deposition (iCVD)

When and Where

Apr 4, 2018
5:00pm - 7:00pm
PCC North, 300 Level, Exhibit Hall C-E

Presenter(s)

Co-Author(s)

Minghui Wang1,Andong Liu1,2,Stefan Schroeder1,Junjie Zhao1,Karen Gleason1

Massachusetts Institute of Technology1,Harvard Medical School2

Keywords

chemical vapor deposition (CVD) (deposition) | thin film

Symposium Organizers

Jianguo Mei, Purdue University
Hanying Li, Zhejiang University
Joon Hak Oh, Pohang University of Science and Technolog (POSTECH)
Tse Nga Ng, University of California, San Diego

Symposium Support

MilliporeSigma (Sigma-Aldrich Materials Science)
MRS Invitation to Publish
All authors are invited to submit articles based on their 2018 MRS Spring
Meeting presentations to journals in the MRS portfolio.
(www.mrs.org/publications-news) Papers submitted and accepted for
publication in MRS Advances (www.mrs.org/mrs-advances) will be
available as symposium collections. Visit the MRS/Cambridge University
Press Publications Booth #100 in the Exhibit Hall to learn more, including
MRS Advances print options available at special rates during the meeting
week only.

Session Chairs

Mei Jianguo
Tse Nga Ng

In this Session