Hongping Zhao

Presentation History

2022 MRS Spring Meeting

High Aspect Ratio β-Ga₂O₃ FinFETs with Near-Zero Hystersis and Low On-Resistance by Matel-Assisted Chemical Etching

May 13, 2022, 2:45 PM

2022 MRS Spring Meeting

In Situ MOCVD Growth of Dielectric Al₂O₃ on β-(Al_xGa_1-x)₂O₃: Interfaces and Band Offsets

May 13, 2022, 9:45 AM

2022 MRS Spring Meeting

Status of MOCVD Development of UWBG Ga₂O₃, AlGaO and Heterostructures

May 12, 2022, 1:30 PM

2022 MRS Spring Meeting

Vertical GaN P-N Power Diodes with over 5 kV Breakdown Voltage

May 11, 2022, 3:30 PM

2022 MRS Spring Meeting

MOCVD Development of Thick GaN for Vertical High Power Devices

May 11, 2022, 2:30 PM

2021 MRS Fall Meeting

Laser-Assisted MOCVD GaN Epitaxy and Developments of Ternary Nitrides, Heterostructures and Quantum Wells

Dec 8, 2021, 8:30 AM

2021 MRS Spring Meeting

MOCVD Epitaxy of β-(Al_xGa_1−x)₂O₃ Films on (100) and (-201) β-Ga₂O₃ Substrates with Al Compositions up to 52%

Apr 19, 2021, 2:10 PM

2021 MRS Spring Meeting

Mg Acceptor Doping in MOCVD (010) β-Ga₂O₃

Apr 19, 2021, 1:25 PM

2021 MRS Spring Meeting

MOCVD GaN Epitaxy with Fast Growth Rates

Apr 19, 2021, 11:40 AM

2021 MRS Spring Meeting

GaN P-N Power Diodes with > 1.5 kV Breakdown Voltage

Apr 19, 2021, 8:55 AM

2021 MRS Spring Meeting

Laser-Assisted MOCVD GaN Epitaxy for Vertical Power Device Applications

Apr 19, 2021, 8:40 AM

2021 MRS Spring Meeting

Current Status of Deep Level Defects in β-Ga₂O₃

Apr 18, 2021, 6:54 PM

2021 MRS Spring Meeting

Materials and Device Engineering for AlGaN and β-Ga₂O₃ UWBG Electronic Devices

Apr 18, 2021, 6:30 PM

2018 MRS Spring Meeting

Heterovalent Ternary Nitride Semiconductors and Mixed Binary-Ternary Heterostructures for Solar Photovoltaics and Optoelectronics

Apr 5, 2018, 3:30 PM