Atsushi Hiraiwa

Presentation History

2023 MRS Fall Meeting

Reliable Formation of Diamond p-Type Channel by Additional Negative Ions Formed from Corona Discharge

Dec 7, 2023, 10:00 AM

2023 MRS Fall Meeting

Normally-Off Vertical Diamond MOSFETs with Drain Current Density over 200 mA/mm using Oxidized Si Terminated Diamond Channel Formed by Si Molecular Beam Deposition Approaches

Dec 7, 2023, 9:00 AM

2023 MRS Fall Meeting

MOSFETs on (111) Highly Oriented Polycrystalline 1-Inch Diamond Substrate

Nov 28, 2023, 10:45 AM

2022 MRS Fall Meeting

Normally-Off Operation in (001) Vertical Diamond MOSFET Using Oxidized Si Termination Diamond Channel

Nov 30, 2022, 1:45 PM

2021 MRS Fall Meeting

Lowest Contact Resistance for High Drain Current Density >1A/mm at Diamond MOSFETs with Heavily Boron-Doped Source and Drain

Nov 30, 2021, 3:00 PM

2021 MRS Fall Meeting

C-Si Bonded 2DHG Diamond MOSFETs—Improvement of Interface Characteristics by Thin Gate Insulating Film

Nov 30, 2021, 2:30 PM

2021 MRS Fall Meeting

High Voltage (-580 V) Vertical- Diamond MOSFET by 2DHG Channel and Implementing p^--Drift Layer

Nov 30, 2021, 2:00 PM

2019 MRS Fall Meeting

(111) Vertical-Type 2DHG Diamond MOSFETs with Hexagonal Trench Structures

Dec 3, 2019, 9:15 AM

2019 MRS Fall Meeting

1.4×10⁷ cm/s Carrier Velocity and RF Power Performance Biased at −70 V for 2DHG Diamond MOSFETs with Thick ALD-Al₂O₃ Film

Dec 2, 2019, 4:30 PM