Symposium EL11-Wide and Ultrawide Bandgap Materials, Devices and Applications

Research in wide and ultra-wide-bandgap (WBG/UWBG) semiconductor materials (bandgap over 3 eV) and devices continues to progress rapidly. Materials beyond silicon carbide and gallium nitride, such as gallium oxide, diamond, cubic boron nitride, aluminum nitride, and others, are at the frontier of semiconductor materials and device physics research. While such materials hold great promise for applications such as ultraviolet optoelectronic emitters and detectors, more compact and efficient energy converters, higher power high-frequency amplifiers, and quantum information science, many materials and processing challenges must still be addressed before UWBG semiconductors mature and can have significant impact. For example, many of the fundamental properties of these emerging materials are still poorly understood, including the physics of high-energy carrier scattering and transport responsible for electrical breakdown. Practical challenges such as efficient and controllable n- and p-type doping, synthesis of large area, low-defect-density substrates, the formation of reliable, low-resistance electrical contacts, and the integration of dielectric films with high quality interfaces are also areas that need to be further advanced before delivery of mature, viable, and cost competitive UWBG technologies can occur. This symposium will address a comprehensive set of topics related to the materials science, device physics, and processing of ultra-wide-bandgap materials, with a view towards the applications that are driving research in the field. The concept of co-design, whereby research topics such as those described above as well as their potential impact on applications are considered concurrently, is anticipated to be a theme of the symposium. Topics of current interest in the more traditional wide-bandgap materials is also encouraged for this symposium. Additionally, the symposium organizers highly encourage graduate student presentations and posters, and expect to recognize multiple student contributions with best presentation and poster awards.

Topics will include:

Defects and Doping
First-principles theory
Electronic transport and carrier dynamics
Advanced materials characterization and techniques
Heterointergration approaches
WBG/UWBG electronic and optoelectronic devices
Materials and device processing
Ultraviolet emitters and detectors
Thermal properties and electro-thermal co-design
Color centers for quantum technologies
Advanced SiC and III-Nitride materials and devices

Invited Speakers:

Andrew Allerman (Sandia National Laboratories, USA)
Oliver Bierwagen (Paul Drude Institute for Solid State Electronics, Germany)
Michael Dudley (Stony Brook University, The State University of New York, USA)
Hiroshi Fujioka (The University of Tokyo, Japan)
Bernard Gil (Université de Montpellier, France)
Andrew Green (Air Force Research Laboratory, USA)
Timothy Grotjohn (Michigan State University, USA)
Masataka Higashiwaki (Osaka Metropolitan University, Japan)
Ryota Ishii (Kyoto University, Japan)
Jong Kyu Kim (Pohang University of Science and Technology, Republic of Korea)
Yoshinao Kumagai (Tokyo University of Agriculture and Technology, Japan)
Jacob Leach (Kyma Technologies, USA)
Ilja Makkonen (University of Helsinki, Finland)
Hideto Miyake (Mie University, Japan)
John Muth (North Carolina State University, USA)
Hari Nair (Cornell University, USA)
Georges Pavlidis (University of Connecticut, USA)
Siddharth Rajan (The Ohio State University, USA)
Julita Smalc-Koziorowska (Institute of High Pressure Physics of the Polish Academy of Sciences, Poland)
Takashi Taniguchi (National Institute for Materials Science, Japan)
Lasse Vines (University of Oslo, Norway)
Grace Xing (Cornell University, USA)
Jiandong Ye (Nanjing University, China)