Symposium EL04-Radiation Effects in Semiconductors for Extreme Environments

Research on radiation effects in semiconductors for applications in extreme environments remains an active and crucial area of study. Radiation-hardening techniques are being actively explored to enhance the resilience of semiconductor devices against ionizing radiation, especially for applications in space, nuclear power plants, medical devices, and high-altitude aviation. Extensive efforts are concentrated on gaining a deeper understanding of the mechanisms by which ionizing radiation impacts semiconductor materials, encompassing studies on the effects of various radiation types, such as gamma rays, neutrons, and ions, on both the electronic and structural properties of semiconductors. In parallel, identifying or engineering semiconductor materials that inherently possess greater resistance to radiation-induced damage remains a focal point to address the need for radiation tolerance to ensure reliability. Device-level studies are also being conducted to assess the impact of radiation on the performance and reliability of specific semiconductor devices. The success of implementing radiation-hard semiconductor technologies relies on key breakthroughs and fundamental discoveries in semiconductor materials and device designs. This symposium hopes to bring together prominent efforts in this field. Particular emphasis will be laid on novel experimental and modeling approaches that approach radiation responses of (ultra)wide bandgap materials and devices.

Topics will include:

Advanced experimental, modeling, and data-driven approaches to predict the effects of ionizing radiation
Behavior and properties of radiation-induced defects
Radiation-induced single-event effects
Radiation-induced degradation of electronic performance
Innovative strategies for enhancing the radiation hardness of semiconductor devices
Novel semiconductor materials or modifications to existing materials to improve their inherent resistance to radiation-induced damage

Invited Speakers:

Ruben Alia Garcia (Conseil européen pour la Recherche nucléaire, Switzerland)
Aaron Arehart (The Ohio State University, USA)
Scooter Ball (Vanderbilt University, USA)
Stefano Bonaldo (Università degli Studi di Padova, Italy)
Rongming Chu (The Pennsylvania State University, USA)
Rosine Coq Germanicus (Université de Caen Normandie, France)
Esmat Farzana (Iowa State University, USA)
Max Fischetti (The University of Texas at Dallas, USA)
Ani Khachatrian (U.S. Naval Research Laboratory, USA)
Andrew O'Hara (Western Michigan University, USA)
Stephen Pearton (University of Florida, USA)
Miguel Sequeira (Instituto Superior Técnico, University of Lisbon, Portugal)
Blair Tuttle (The Pennsylvania State University, USA)
Chris Van de Walle (University of California, Santa Barbara, USA)
Grace Xing (Cornell University, USA)
Enxia Zhang (University of Central Florida, USA)