2025 MRS Fall Meeting & Exhibit
Symposium EL01-Phase-Change Materials and Heterostructures for Photonics, In-Memory and Neuromorphic Computing
The symposium aims to investigate cutting-edge topics in phase-change materials (PCMs), heterostructures, and their nanofabrication, with the goal of addressing challenges in the advancement of practical photonics, in-memory, and neuromorphic computing devices. The purpose is to provide a comprehensive summary of current progress in design ideas, material platforms, manufacturing processes, and their potential applications. The ever-increasing demand for processing and data storage, driven by AI and other data-intensive applications, is posing a significant challenge to existing computing systems based on the von Neumann architecture. The sequential transfer of data sets between memory and storage units and processors results in approximately 45% power waste. PCMs made from antimonides or chalcogenides can overcome this limitation by creating non-volatile memory devices and neuromorphic computing devices that combine storage and processing in the same memory cells. PCMs can flip between crystalline and amorphous phases using optical and electrical pulses, establishing binary states “1” and “0” for memory applications. The gradual change in reflectivity and resistance during partial crystallization or amorphization can be used to simulate neuronal dynamics for brain-inspired computing. Other phase-change memory systems include two-dimensional materials and metal oxides such as MoTe2 and VO2, which enable transitions between logical states by switching between distinct crystalline phases. Besides, the recent identification of novel PCMs with advantageous characteristics such as compatibility with CMOS technology, reconfigurable optics, and minimal loss has the potential to facilitate significant advancements in the fields of optical metamaterials, nanophotonics, and their respective applications. Moreover, the manipulation of the structure of PCMs and heterostructures is essential in determining their physical properties, offering an exciting opportunity to discover unique features, enhance new functions, and create sustainable electronics. Additionally, the symposium will provide participants with an opportunity to explore the current cutting-edge research on PCM-based devices, covering the processes of nanofabrication, operation, and integration. The symposium also aims to investigate innovative phase-change phenomena as well as unique modelling methodologies for PCMs and cutting-edge designs that use machine-learning techniques.
Topics will include:
- PCM atomic modelling and imaging
- PCM crystallization kinetics
- Design and characterization of PCMs; Nanofabrication of cutting-edge PCMs and devices
- PCMs with high temperature capabilities and memory integration
- Device degradation processes and cycling endurance
- Multilevel storage and resistance-drift effect
- PCMs in neuromorphic and in-memory computing; Metamaterials and photonics with non-volatile properties
- Selector devices and threshold switching phenomena
- PCM thermal and optical characteristics
- PCMs and heterostructures for different applications
Invited Speakers:
- Omar Abou El Kheir (Università degli Studi di Milano-Bicocca, Italy)
- Jaakko Akola (Norwegian University of Science and Technology, Norway)
- Fabrizio Arciprete (Università degli Studi di Roma Tor Vergata, Italy)
- Valeria Bragaglia (IBM Research–Zurich, Switzerland)
- Matthew BrightSky (IBM T.J. Watson Research Center, USA)
- Raffaella Calarco (Consiglio Nazionale delle Ricerche, Italy)
- Shinhyun Choi (Korea Advanced Institute of Science and Technology, Republic of Korea)
- Volker Deringer (University of Oxford, United Kingdom)
- Behrad Gholipour (University of Alberta, Canada)
- Ali Gokirmak (University of Connecticut, USA)
- Juejun Hu (Massachusetts Institute of Technology, USA)
- Kairan Huang (University of Oxford, United Kingdom)
- Hyun-Jung Kim (Korea Advanced Institute of Science and Technology, Republic of Korea)
- Taehoon Lee (Kyungpook National University, Republic of Korea)
- Andriy Lotnyk (Leibniz Institute of Surface Engineering, Germany)
- Riccardo Mazzarello (Sapienza Università di Roma, Italy)
- Antonio Mio (Consiglio Nazionale delle Ricerche, Italy)
- Kunal Mukherjee (Stanford University, USA)
- Gabriele Navarro (CEA-Leti, France)
- Elisa Petroni (STMicroelectronics, Italy)
- Elena Pinilla-Cienfuegos (Universitat Politècnica de València, Spain)
- Carlos Ríos (University of Maryland, USA)
- Carlota Ruiz de Galarreta (University of Exeter, United Kingdom)
- Martin Salinga (Universität Münster, Germany)
- Yi Shuang (Tohoku University, Japan)
- Zhimei Sun (Beihang University, China)
- Ghazi Sarwat Syed (IBM Research–Zurich, Switzerland)
- Olivier Thomas (Aix-Marseille Université, France)
- Xiangjin Wu (Stanford University, USA)
- Jong-Souk Yeo (Yonsei University, Republic of Korea)
Symposium Organizers
Desmond Loke
Singapore University of Technology and Design
Singapore
Stephen Elliott
University of Cambridge
United Kingdom
Stefania Privitera
Consiglio Nazionale delle Ricerche
Italy
Helena Silva
University of Connecticut
USA
Topics
amorphous
Computing
crystal
crystalline
glass
heterostructure
memory
nanostructure
neuromorphic
photonic