Even as conventional Cu/Ultra-low-k interconnect technology has slowed in recent years due to challenges in both ultra-low k integration and metal barrier scaling, a plethora of options are being investigated for technology nodes below 10 nm, including new conductors, dielectrics, barrier layers, and process integration methods. In parallel, emerging packaging technology such as 2.5D/3D Integrated circuit integration are demonstrating means to improve circuit density and performance. Technologies including Through Silicon Vias are increasingly utilizing recent interconnect material and process advances to further packaging innovations. Moreover, using interconnects as a backbone, the introduction of additional functionality in the back-end of line (BEOL) has constituted new areas of research and opportunity. At the same time, a fundamental trend is emerging with the growing awareness of the environmental impacts of technologies. In this context, increasing performance is no longer the only driver of innovation with sustainability and supply chain resiliency for BEOL materials, additives, and processes receiving increased consideration.

This session will focus on both continued advances in conventional interconnect technology and novel interconnect integration and architecture schemes. Topics will include advances in dielectric materials and integration, novel etch stop and hard-mask materials, advanced metallization materials and processes, area selective deposition and supervia scaling boosters, alternatives to conventional interconnect technology (3D, optical interconnects), the introduction of additional functionalities in the BEOL and interconnect developments for flexible electronics and wearables devices. This symposium will also looks at advances to simplify or economize for materials, processes and tools for a sustainable microelectronic.

atomic layer deposition atomic layer etching CMP (chemical mechanical processing) electrodeposition physical vapor deposition (PVD) plasma-enhanced CVD (PECVD) (deposition)