Phase-change materials (PCMs), such as chalcogenides alloys (GeTe, Ge₂Sb₂Te₅, AgInSbTe, GeSbSe, etc.), and VO₂, have recently emerged as a promising platform to control both nanoscale electronic and photonic devices on-chip due to their fast, dramatic, and reversible change in electrical and optical properties. Since their initial demonstration, significant technical progress in the field of both electrical and optical PCMs has been achieved in terms of finding new alloys with superior switching speeds, optical transparency, opto-electronic control, and large-scale electronic and photonic integration. These advances have led to exciting applications ranging from reconfigurable RF and photonic switches, ovonic threshold selectors, tunable optical metasurfaces, and highly efficient in-memory computing.

With the growing academic and industrial interest in these unique materials, it is crucial to understand both the advantages and challenges of PCMs to inform future research in this field. Further work is needed at the materials, device, and systems levels to address current challenges such as integrating emerging PCMs into the foundry process flow, optimizing multilevel reliability for in-memory computing applications, and improving large area switching endurance for both RF and photonic devices. Presenters and invited speakers will represent a broad range of disciplines from chemistry, physics, engineering, and materials science to encourage fertile cross-cutting discussions.

amorphous electronic material lithography (deposition) memory neuromorphic nucleation & growth photonic thermoelectric