Symposium EL07-1D and 2D Materials—Electronic Properties and Device Applications

Emerging nanoscale quantum materials, including 1D (nanotubes, nanoribbons, nanowires, etc.) and 2D materials (graphene, phosphorene, silicene, telurene, transition metal di-/tri-chalcogenides, group-III/-IV chalcogenides, transition metal phosphorus trisulfide, MXenes, oxides, nitrides and carbides), provide unique opportunities for the exploration of exotic physical phenomena at the very bottom. New physics associated with the quantum-confined nanostructures and/or the unique crystalline and electronic structures may emerge only in these low-dimensional quantum material systems, which would enable novel electronic and quantum device applications with unprecedented functionality, energy efficiency, and form factors. This symposium will focus on the fundamental and practical aspects of various emerging functionalities and innovative technologies enabled by 1D and 2D materials. Interdisciplinary topics related to the physics, chemistry, and device applications of these emerging quantum materials will be covered, including electronic and transport properties; device physics and process engineering for advanced logic, memory, and interconnect applications; as well as the recent progress of heterogeneous integration, non-von Neumann computing architectures, in-memory and in-sensor computing, and wearable electronics enabled by these materials.

Topics will include:

Electronic structures and transport properties of 1D and 2D materials
Metallic, semiconducting, and insulating 1D and 2D materials for emerging computing technologies (including logic, memory, and interconnect)
Ferromagnetic, ferroelectric, multiferroic, and phase-change properties and emerging neuromorphic and in-memory computing technologies based on 1D and 2D materials
Spintronics and quantum information technologies based on 1D and 2D materials
Sensors, actuators, and other functional devices based on 1D and 2D materials
Heterogeneous integration, flexible and wearable electronics enabled by 1D and 2D materials

Invited Speakers:

Jeorg Appenzeller (Purdue University, USA)
Michael Arnold (University of Wisconsin–Madison, USA)
Amin Azizi (Taiwan Semiconductor Manufacturing Company, Taiwan)
Judy Cha (Cornell University, USA)
Manish Chhowalla (University of Cambridge, United Kingdom)
Susan Fullerton (University of Pittsburgh, USA)
Aran Garcia-Lekue (Donostia International Physics Center, Spain)
Mark Hersam (Northwestern University, USA)
Ernesto Joselevich (Weizmann Institute of Science, Israel)
Philip Kim (Harvard University, USA)
Mario Lanza (King Abdullah University of Science and Technology, Saudi Arabia)
Xi Ling (Boston University, USA)
Yuanyue Liu (The University of Texas at Austin, USA)
Jun Lou (Rice University, USA)
Vincent Meunier (The Pennsylvania State University, USA)
Zafer Mutlu (University of Arizona, USA)
Farnaz Niroui (Massachusetts Institute of Technology, USA)
Taisuke Ohta (Sandia National Laboratory, USA)
Tomás Palacios (Massachusetts Institute of Technology, USA)
Eric Pop (Stanford University, USA)
Deborah Prezzi (Consiglio Nazionale delle Ricerche, Italy)
Xiaofeng Qian (Texas A&M University, USA)
Iuliana Radu (Taiwan Semiconductor Manufacturing Company, Taiwan)
Joshua A. Robinson (The Pennsylvania State University, USA)
Pascal Ruffieux (Empa–Swiss Federal Laboratories for Materials Science and Technology, Switzerland)
Hatef Sadeghi (Warwick University, United Kingdom)
Hyeon-Jin Shin (Samsung Advanced Institute of Technology, Republic of Korea)
Herre van der Zant (Delft University of Technology, Netherlands)
Xu Zhang (Carnegie Mellon University, USA)
Wenjuan Zhu (University of Illinois at Urbana-Champaign, USA)