Symposium QT08—Group IV Quantum Engineering

Uncovering and harnessing quantum phenomena in materials that can leverage industrial semiconductor manufacturing is a long-sought-after strategy to create novel or superior quantum technologies for computing, communication, and sensing. With this perspective, this symposium will bring together a diverse set of scientific communities to present and discuss the progress, current challenges, and future opportunities in group IV quantum engineered materials for integrated quantum technologies. The symposium will cover the broad spectrum from fundamental materials and quantum science to engineering and industrial applications. The first part of the symposium will be dedicated to quantum systems based on group IV materials that are readily integrated on a Si wafer (Si, SiC, Ge, Sn, and their alloys) and their use as platforms to tailor and tune key quantum processes and particles (fermions, Majorana fermions, bosons, anyons, etc.). This includes two-dimensional electron and hole gases, quantum dots, quantum wires, metal-oxide-semiconductor structures, atomic- level doped semiconductors, topological insulators, hybrid superconductor-semiconductor systems, isotopically programmed semiconductors, defect-enabled optical emitters, and ultrasensitive micro- and nano-electromechanical systems (MEMS/NEMS). The key focus will be on the significant progress in materials to solve outstanding challenges in generating, controlling, and manipulating quantum states and quasi-particles. The second part of the symposium will target group IV-enabled quantum components such as qubits, single-photon emitters, single-photon detectors, quantum repeaters, quantum transducers, quantum LIDAR, gravitometers, nanoscale magnetic sensors, etc. Special sessions will be dedicated to focused topics on ultrasensitive metrology, theoretical modeling, quantum device packaging, and challenges in industry-compatible quantum manufacturing.

Abstracts will be solicited in the following areas: Scalable and CMOS-compatible quantum materials and devices; Group IV elements and alloys; Silicon- integrated quantum technologies; Qubits; Single-photon emitters; Single-photon detectors; Ultrasensitive MEMS and NEMS; Spin-photon interfaces; Quantum photonics; Quantum communication; Quantum computing; Quantum sensing.

• Two-dimensional hole and electron gases
• Quantum dots and Quantum wires
• Single atom doping
• Isotopically enriched semiconductors
• Topological insulators
• Single-photon emitters
• Single-photon detectors
• Spin injection and spin devices
• Photon-to-spin conversion
• Ultrasensitive micro- and nano-electromechanical systems
• Scalable quantum photonics and topological quantum photonics
• Quantum communication and quantum computation
• Quantum sensing and metrology
• Topological quantum computation
• Modeling and packaging

• Marco Abbarchi (University Aix-Marseille 3, France)
• Gerald Buller (Heriot-Watt University, United Kingdom)
• Stefano Chesi (Beijing Computational Science Research Center, China)
• Anais Dreau (Université de Montpellier, France)
• Eva Dupont-Ferrier (Université de Sherbrooke, Canada)
• Mark A. Eriksson (University of Wisconsin–Madison, USA)
• Elham Fadaly (Eindhoven University of Technology, Netherlands)
• Yvonne Gao (National University of Singapore, Singapore)
• Andrea Hofmann (Institute of Science and Technology Austria, Austria)
• Angela Kou (University of Illinois at Urbana-Champaign, USA)
• Holly Stemp (University of New South Wales, Australia)
• Menno Veldhorst (Delft University of Technology, Netherlands)