Symposium EQ03—Next-Generation Organic Semiconductors—Materials, Fundamentals and Applications

Organic semiconductors continue to draw great attention from different disciplines because of the plethora of unique and attractive properties they can exhibit. Recent advances in fundamental understanding, coupled with the introduction of new materials and synthetic routes, have enabled the development of a wide range of devices with new functionalities and performance on par with established inorganic technologies. Such demonstrations are paving the way for many innovative applications in emerging sectors of science and technology. This symposium focuses on recent advances on the synthesis, characterization and application of organic materials and devices. Of particular interest are the molecular design, solid-state structure, physics and applications of emerging classes of molecules, including macromolecular semiconductors, molecular dopants, self-assembling surface-modifying molecules, open-shell organic semiconductors, light-emitting molecules with enhanced reverse intersystem crossing, solid-state laser materials, organic thermoelectrics and mixed ion-electron (hole) conductors. The ultimate aim of the symposium is to provide a venue for researchers to discuss recent developments, challenges and emerging opportunities in this field.

Topics will include:

Design and synthesis of new organic semiconductors
Development of new dopant molecules
Engineering the solid-state structure of organic single crystals and thin films
Device design for improved charge injection and charge transport
Stretchable and flexible electronics, optoelectronics, sensors, OFETs, OLEDs and OSCs
Heterointerfaces at electron/hole transport semiconductors, donor-acceptor interfaces, metal- or insulator-semiconductor interfaces
Novel organic optical sources
Fundamentals of charge injection and transport in organic semiconductors
Exciton formation, dissociation and charge recombination
Fundamental characterization by XPS, SPM, XRD, NEXAFS etc.

Invited Speakers:

Kouki Akaike (National Institute of Advanced Industrial Science and Technology, Japan)
John Anthony (University of Kentucky, USA)
Thomas Anthopoulos (King Abdullah University of Science and Technology, Saudi Arabia)
Ana Claudia Arias (University of California, Berkeley, USA)
Ilaria Bargigia (Wake Forest University, USA)
Michael Chabinyc (University of California, Santa Barbara, USA)
Konstantinos Daskalakis (University of Turku, Finland)
Antonio Facchetti (Northwestern University, USA)
Hirohiko Fukagawa (Japan Broadcasting Corporation, Japan)
Keiki Fukumoto (High Energy Accelerator Research Organization, KEK, Japan)
Nicola Gasparini (Imperial College London, United Kingdom)
Martin Heeney (Imperial College London, United Kingdom)
Peter Ho (National University of Singpore, Singapore)
Jong-Won Jung (Samsung Advanced Institute of Technology, Republic of Korea)
Antoine Kahn (Princeton University, USA)
John Labram (Oregon State University, USA)
Karl Leo (Technische Universität Dresden, Germany)
Martyn McLachlan (Imperial College London, United Kingdom)
Thuc-Quyen Nguyen (University of California, Santa Barbara, USA)
Yong-Young Noh (Pohang University of Science and Technology, Republic of Korea)
Alexandra F. Paterson (University of Kentucky, USA)
Pichaya Pattansattayavong (Vistec, Thailand)
Alberto Salleo (Stanford University, USA)
Ingo Salzmann (Concordia University, Canada)
Peter Skabara (University of Glasgow, United Kingdom)
Yana Vaynzof (Technische Universität Dresden, Germany)
Elizabeth von Hauff (Vrije Universiteit Amsterdam, Netherlands)
Liyang Yu (Sichuan University, China)