Symposium EQ01—Ultra-Wide Bandgap Materials and Devices

Research in ultra-wide-bandgap (UWBG) semiconductor materials and devices continues to progress rapidly. Materials beyond silicon carbide and gallium nitride, such as gallium oxide, diamond, cubic boron nitride, aluminum nitride, and others, are at the frontier of semiconductor materials research and device physics. While such materials hold great promise for applications such as ultraviolet optoelectronic emitters and detectors, more compact and efficient energy converters, higher power high-frequency amplifiers, and quantum information science, many materials and processing challenges must still be addressed before UWBG semiconductors mature and can have significant impact. For example, many of the fundamental properties of these emerging materials are still poorly understood, including the physics of high-energy carrier scattering and transport responsible for electrical breakdown. Practical challenges such as efficient and controllable n- and p-type doping, synthesis of large area, low-defect-density substrates, the formation of reliable, low resistance electrical contacts, and the integration of dielectric films with high quality interfaces are also areas that need to be further advanced before delivery of mature, viable, and cost competitive UWBG technologies can occur. This symposium will address a comprehensive set of topics related to the materials science, device physics, and processing of ultra-wide-bandgap materials, with a view towards the applications that are driving research in the field. Topics of current interest in the more traditional wide-bandgap materials will also be considered.

• Bulk crystals, substrates, and epitaxial growth
• Theory and first-principles calculations
• Defect science, including doping
• Novel polarization effects and utilization in devices
• UWBG heterostructures and low-dimensional structures
• Device performance and reliability
• Carrier recombination dynamics
• Gate and passivation dielectrics
• Thermal properties and thermal engineering
• Advanced materials characterization techniques
• Color centers for quantum technologies
• Ultraviolet emitters and detectors

• Jocelyn Achard (Centre National de la Recherche Scientifique, France)
• Andrew Allerman (Sandia National Laboratories, USA)
• Sukwon Choi (The Pennsylvania State University, USA)
• David Eon (Centre National de la Recherche Scientifique, France)
• Timothy Grotjohn (Michigan State University, USA)
• Masataka Higashiwaki (National Institute of Information and Communications Technology, Japan)
• Hiroshi Kawarada (Waseda University, Japan)
• Anke Krüger (Universität Würzburg, Germany)
• Maki Kushimoto (Nagoya University, Japan)
• Farid Medjdoub (University of Lille, France)
• Zetian Mi (University of Michigan–Ann Arbor, USA)
• Hideto Miyake (Mie University, Japan)
• Nobuko Naka (Kyoto University, Japan)
• Robert Nemanich (Arizona State University, USA)
• Nicolas Rouger (Centre National de le Recherche Scientifique, France)
• Kohei Sasaki (Japan Cybertech, Japan)
• Arunima Singh (Arizona State University, USA)
• Marko Tadjer (U.S. Naval Research Laboratory, USA)
• Norio Tokuda (Kanazawa University, Japan)
• Takahide Yamaguchi (National Institute for Materials Science, Japan)
• Hongping Zhao (The Ohio State University, USA)
• Mary Ellen Zvanut (The University of Alabama, USA)