Halide perovskites have emerged as a new class of semiconductors with exceptional material properties, making them promising candidates for a plethora of optoelectronic applications. Despite their rapid development, halide perovskites remain highly enigmatic, simultaneously featuring properties reminiscent of organic and traditional inorganic semiconductors. The origin and extent of novel features, such as defect tolerance, bright-dark exciton level inversion, or high ion mobility, have not been fully understood. To date, a lack of deep insight into the interplay between structure, morphology, and optical and electronic properties impedes the further advancement of halide perovskites.

This symposium will be a platform for researchers whose work addresses underlying fundamental material aspects. Research topics covered in the symposium will include, among others, the latest advances in photophysics, charge carrier transport, ultrafast spectroscopy, band-structures, and phonon-carrier interaction, role of defects, and mapping/imaging techniques. As the prevalence of individual features can depend on the perovskite morphology, submitted abstracts may focus on bulk-like 3D thin films and single crystals or explore low-dimensional structures such as 2D Ruddlesden-Popper phases or nanocrystals. Sessions focusing on the theoretical description of these phenomena and the development of new computational methods and approaches, for example, machine learning, will complement the experimental parts of this symposium.

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