2021 will mark the 13^th year since the concept of ferroelectric negative capacitance was first proposed as a response to the challenges posed by the ever-increasing energy dissipation in electronics. Under certain conditions, a ferroelectric material can be stabilized in an otherwise unstable, high-energy state, leading to local negative capacitance behavior or a static local negative dielectric permittivity. This unusual behavior opens the possibility of overcoming the fundamental Boltzmann limit for power dissipation in field-effect transistors, and has become a vibrant field of research in condensed mater physics, materials science, and semiconductor devices. Despite the mounting evidence for negative capacitance behavior, which ranges from its manifestation in complex-oxide heterostructures with unusual polar textures to reports of steep-slope switching in ferroelectric field-effect transistors, there are still many unanswered questions, as researchers grapple to understand the fundamental physics of negative capacitance phenomena and their implications for the realization of more efficient devices. More than ever, there is a need for increased dialogue between researchers from the nanoscale ferroelectrics and semiconductor device communities in order to demystify some of the contentious issues surrounding negative capacitance and to establish a common language for further advancing negative capacitance technology. This symposium aims to provide a forum for interactions between physicists, materials scientists and engineers in academia and industry, addressing all aspects of ferroelectric negative capacitance, as well as broader topics in nanoscale ferroelectricity that are of relevance to thin-film ferroelectric devices.

ceramic electronic material ferroelectric modeling nanoscale perovskites semiconducting simulation